KU3600N10W N-Channel MOSFET

KEC

Description

SEMICONDUCTOR TECHNICAL DATA General .
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristic.

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Datasheet Specifications

Part number: KU3600N10W
Manufacturer: KEC
File Size: 599.24 KB
Datasheet: KU3600N10W-KEC.pdf
Description: N-Channel MOSFET

Features

* VDSS(Min. )= 100V, ID= 1.7A Drain-Source ON Resistance : RDS(ON)=0.36 Qg(typ. ) =4.2nC (max) @VGS =10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage VDSS 100 Gate-Source Voltage VGSS 20 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy

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KU3600N10W N-Channel MOSFET KEC

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