Datasheet4U Logo Datasheet4U.com

KU3600N10W N-Channel MOSFET

KU3600N10W Description

SEMICONDUCTOR TECHNICAL DATA General .
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristic.

KU3600N10W Features

* VDSS(Min. )= 100V, ID= 1.7A Drain-Source ON Resistance : RDS(ON)=0.36 Qg(typ. ) =4.2nC (max) @VGS =10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage VDSS 100 Gate-Source Voltage VGSS 20 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy

📥 Download Datasheet

Preview of KU3600N10W PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
KU3600N10W
Manufacturer
KEC
File Size
599.24 KB
Datasheet
KU3600N10W-KEC.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • KU305 - (KU305 - KU308) OptoSwitch (Stanley Electric)
  • KU306 - (KU305 - KU308) OptoSwitch (Stanley Electric)
  • KU307 - (KU305 - KU308) OptoSwitch (Stanley Electric)
  • KU308 - (KU305 - KU308) OptoSwitch (Stanley Electric)
  • KU3521S28 - Potentiometer (NTE Electronics)
  • KU3521S64 - Potentiometer (NTE Electronics)
  • KU3531S28 - Potentiometer (NTE Electronics)
  • KU386 - SX MICROPROCESSOR (Intel Corporation)

📌 All Tags

N-Channel MOSFET KEC
KEC KU3600N10W-like datasheet