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2N60H N-CHANNEL MOSFET

2N60H Description

KIA SEMICONDUCTORS 2.0A, 600V N-CHANNEL MOSFET 2N60H 1..
The KIA2N60H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switch.

2N60H Features

* RDS(ON)=4.1Ω@VGS=10V.
* Low gate charge (typical 9nC)
* High ruggedness
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability 3. Pin configuration Pin 1 2 3 4 1 of 6 Function Gate Drain Source Drain Rev 1.1 JAN 2014 KIA SEMICONDUCTORS 2.0

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Datasheet Details

Part number
2N60H
Manufacturer
KIA
File Size
485.47 KB
Datasheet
2N60H-KIA.pdf
Description
N-CHANNEL MOSFET

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N-CHANNEL MOSFET KIA
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