Datasheet4U Logo Datasheet4U.com

KIA16N50H - N-CHANNEL MOSFET

Datasheet Summary

Description

This power MOSFET is produced using KIA advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • n RDS(on)=0.32Ω @ VGS=10V n Low gate charge ( typical 45nC) n Fast switching capability n Avalanche energy specified n Improved dv/dt capability 3. Pin configuration Pin 1 2 3 1 of 6 Function Gate Drain Source Rev 1.3 SEP 2014 KIA.

📥 Download Datasheet

Datasheet preview – KIA16N50H

Datasheet Details

Part number KIA16N50H
Manufacturer KIA
File Size 317.05 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet KIA16N50H Datasheet
Additional preview pages of the KIA16N50H datasheet.

📁 Similar Datasheet

Other Datasheets by KIA

Full PDF Text Transcription

Click to expand full text
KIA SEMICONDUCTORS 16A，500V N-CHANNEL MOSFET 16N50H 1.Description This power MOSFET is produced using KIA advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. 2. Features n RDS(on)=0.32Ω @ VGS=10V n Low gate charge ( typical 45nC) n Fast switching capability n Avalanche energy specified n Improved dv/dt capability 3. Pin configuration Pin 1 2 3 1 of 6 Function Gate Drain Source Rev 1.3 SEP 2014 KIA SEMICONDUCTORS 16A，500V N-CHANNEL MOSFET 4.
Published: |