KIA28N50H

N-CHANNEL MOSFET

KIA

KIA28N50H Features

* RDS(on)=0.17Ω @ VGS=10V

* Low gate charge ( typical 102nC)

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability 3. Pin configuration Pin 1 2 3 1 of 5 Function Gate Drain Source Rev 1.0 JAN 2014 KIA SEMICONDUCTORS 28A，500V N-CHANNEL MOSFET 2

KIA28N50H General Description

28N50H This Power MOSFET is produced using KIA advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

KIA28N50H Datasheet (489.59 KB)