Datasheet Details
- Part number
- KIA2N60H
- Manufacturer
- KIA
- File Size
- 485.47 KB
- Datasheet
- KIA2N60H-KIA.pdf
- Description
- N-CHANNEL MOSFET
KIA2N60H Description
KIA SEMICONDUCTORS 2.0A, 600V N-CHANNEL MOSFET 2N60H 1..
The KIA2N60H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switch.
KIA2N60H Features
* RDS(ON)=4.1Ω@VGS=10V.
* Low gate charge (typical 9nC)
* High ruggedness
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability
3. Pin configuration
Pin 1 2 3 4
1 of 6
Function Gate Drain
Source Drain
Rev 1.1 JAN 2014
KIA
SEMICONDUCTORS
2.0
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