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SJMN3 8 0 R6 5 D
Super Junction MOSFET
N-Channel Super Junction MOSFET
Fe at ur e s
Drain-Source voltage: VDS=700V (@TJ=150C) Low drain-source On resistance: RDS(on)=0.38Ω (Max.) Ultra low gate charge: Qg=20nC(Typ.) RoHS compliant device 100% avalanche tested
Ordering Information
Part Number
Marking
Package
SJMN3 8 0 R6 5 D
SJMN3 8 0 R6 5
TO- 2 5 2
D
G S
TO-252
Marking Information
SJMN 3 8 0 R6 5
YWWN
Column 1, 2: Device Code Column 3: Production Information
e. g. ) YWWN -. YWW: Date Code (year, week) -.