SMK0160IS - Advanced N-Ch Power MOSFET
SMK0160IS Features
* Drain-Source breakdown voltage: BVDSS=600V (Min.)
* Low gate charge: Qg=3.9nC (Typ.)
* Low drain-source On resistance: RDS(on)=11.5Ω (Max.)
* 100% avalanche tested
* RoHS compliant device Ordering Information Part Number SMK0160IS Marking SMK0160 Package
