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SMK0160IS

Advanced N-Ch Power MOSFET

SMK0160IS Features

* Drain-Source breakdown voltage: BVDSS=600V (Min.)

* Low gate charge: Qg=3.9nC (Typ.)

* Low drain-source On resistance: RDS(on)=11.5Ω (Max.)

* 100% avalanche tested

* RoHS compliant device Ordering Information Part Number SMK0160IS Marking SMK0160 Package

SMK0160IS Datasheet (482.23 KB)

Preview of SMK0160IS PDF

Datasheet Details

Part number:

SMK0160IS

Manufacturer:

KODENSHI KOREA

File Size:

482.23 KB

Description:

Advanced n-ch power mosfet.

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TAGS

SMK0160IS Advanced N-Ch Power MOSFET KODENSHI KOREA

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