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SMK0260IS

Advanced N-Ch Power MOSFET

SMK0260IS Features

* Drain-Source breakdown voltage: BVDSS=600V (Min.)

* Low gate charge: Qg=7nC (Typ.)

* Low drain-source On resistance: RDS(on)=3.9Ω (Typ.)

* 100% avalanche tested

* RoHS compliant device Ordering Information Part Number SMK0260IS Marking SMK0260 Package I-

SMK0260IS Datasheet (460.58 KB)

Preview of SMK0260IS PDF

Datasheet Details

Part number:

SMK0260IS

Manufacturer:

KODENSHI KOREA

File Size:

460.58 KB

Description:

Advanced n-ch power mosfet.

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TAGS

SMK0260IS Advanced N-Ch Power MOSFET KODENSHI KOREA

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