SMK1060P Datasheet, mosfet equivalent, KODENSHI KOREA

SMK1060P Features

  • Mosfet
  • High Voltage: BVDSS=600V(Min.)
  • Low Crss : Crss=18pF(Typ.)
  • Low gate charge : Qg=35nc(Typ.)
  • Low RDS(on) :RDS(on)=0.75Ω(Max.) PIN Connection D G

PDF File Details

Part number:

SMK1060P

Manufacturer:

KODENSHI KOREA

File Size:

427.87kb

Download:

📄 Datasheet

Description:

Advanced n-ch power mosfet.

Datasheet Preview: SMK1060P 📥 Download PDF (427.87kb)
Page 2 of SMK1060P Page 3 of SMK1060P

SMK1060P Application

  • Applications Features
  • High Voltage: BVDSS=600V(Min.)
  • Low Crss : Crss=18pF(Typ.)
  • Low gate charge : Qg=35nc(Typ.)
  • <

TAGS

SMK1060P
Advanced
N-Ch
Power
MOSFET
KODENSHI KOREA

📁 Related Datasheet

SMK1060 - N-Channel Power MOSFET (VBsemi)
SMK1060-VB SMK1060-VB Datasheet N-Channel 650V (D-S) Power MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (n.

SMK1060D2 - Advanced N-Ch Power MOSFET (KODENSHI KOREA)
SMK1060D2 Advanced N-Ch Power MOSFET SWITCHING REGURATOR APPLICATIONS Features • • • • High Voltage : BVDSS=600V(Min.) Low Crss : Crss=18pF(Typ.) Low.

SMK1060F - Advanced N-Ch Power MOSFET (KODENSHI KOREA)
SMK1060F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features     High Voltage : BVDSS=600V(Min.) Low Crss : Crss=18pF(Typ.) Low .

SMK1060FG - Advanced N-Ch Power MOSFET (KODENSHI)
SMK1060FG Advanced N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features  Low drain-source On resistance: RDS(on)=0.6Ω (Typ.)  Low gate char.

SMK1060FJ - Advanced N-Ch Power MOSFET (KODENSHI)
SMK1060FJ Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features  High Voltage : BVDSS=600V(Min.)  Low Crss : Crss=18pF(Typ.)  Low .

SMK1060PS - Advanced N-Ch Power MOSFET (AUK)
.

SMK1080CI - Advanced N-Ch Power MOSFET (AUK)
WWW.YOZO.HK 021-54953990 021-54950919 Semiconductor Preliminary SMK1080CI Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features P.

SMK1080FD - Advanced N-Ch Power MOSFET (KODENSHI)
SMK1080FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features  Drain-Source breakdown voltage: BVDSS=800V  Low gate charge: Qg=58n.

SMK1080FD - Advanced N-Ch Power MOSFET (KODENSHI KOREA)
SMK1080FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features  Drain-Source breakdown voltage: BVDSS=800V  Low gate charge: Qg=58n.

SMK12 - (SMK12 - SMK1B) SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (EIC)
..net TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 SMK12 - SMK1B PRV : 20 - 100 Volts IO : 1.0 Ampere * * * * * * * * High c.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts