SMK1060 Datasheet, Mosfet, VBsemi

SMK1060 Features

• Mosfet
• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss)
• Reduced switching and conduction losses
• Ultra low gate charge (Qg)
• Aval

PDF File Details

Part number:

SMK1060

Manufacturer:

VBsemi

File Size:

266.12kb

Download:

📄 Datasheet

Description:

N-channel power mosfet.

SMK1060 Application

• Applications
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplie

TAGS

SMK1060

VBsemi

📁 Related Datasheet

SMK1060D2 - Advanced N-Ch Power MOSFET (KODENSHI KOREA)
SMK1060D2 Advanced N-Ch Power MOSFET SWITCHING REGURATOR APPLICATIONS Features • • • • High Voltage : BVDSS=600V(Min.) Low Crss : Crss=18pF(Typ.) Low.

SMK1060F - Advanced N-Ch Power MOSFET (KODENSHI KOREA)
SMK1060F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features     High Voltage : BVDSS=600V(Min.) Low Crss : Crss=18pF(Typ.) Low .

SMK1060FG - Advanced N-Ch Power MOSFET (KODENSHI)
SMK1060FG Advanced N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features  Low drain-source On resistance: RDS(on)=0.6Ω (Typ.)  Low gate char.

SMK1060FJ - Advanced N-Ch Power MOSFET (KODENSHI)
SMK1060FJ Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features  High Voltage : BVDSS=600V(Min.)  Low Crss : Crss=18pF(Typ.)  Low .

SMK1060P - Advanced N-Ch Power MOSFET (KODENSHI KOREA)
Semiconductor SMK1060P Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • High Voltage: BVDSS=600V(Min.) • Low Crss : Crss=18pF(.

SMK1060PS - Advanced N-Ch Power MOSFET (AUK)
.

SMK1080CI - Advanced N-Ch Power MOSFET (AUK)
WWW.YOZO.HK 021-54953990 021-54950919 Semiconductor Preliminary SMK1080CI Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features P.

SMK1080FD - Advanced N-Ch Power MOSFET (KODENSHI)
SMK1080FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features  Drain-Source breakdown voltage: BVDSS=800V  Low gate charge: Qg=58n.

SMK1080FD - Advanced N-Ch Power MOSFET (KODENSHI KOREA)
SMK1080FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features  Drain-Source breakdown voltage: BVDSS=800V  Low gate charge: Qg=58n.

SMK12 - (SMK12 - SMK1B) SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (EIC)
..net TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 SMK12 - SMK1B PRV : 20 - 100 Volts IO : 1.0 Ampere * * * * * * * * High c.