SJMN04A65D Datasheet - KODENSHI KOREA

SJMN04A65D - N-Channel Super Junction MOSFET

SJMN04A65D Features

* Drain-Source voltage: VDS=700V (@TJ=150C)

* Low drain-source On resistance: RDS(on)=0.83Ω (Typ.)

* Ultra low gate charge: Qg=10nC (Typ.)

* RoHS compliant device

* 100% avalanche tested Ordering Information Part Number Marking Package SJMN04A65D SJMN04A65 TO-252 D G S

Datasheet Details

SJMN04A65D

KODENSHI KOREA

425.68 KB

N-channel super junction mosfet.

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