2SB930A
2SB930A is PNP Transistors manufactured by Kexin Semiconductor.
Features
High forward current transfer ratio h FE which has satisfactory linearity.
+0.2 9.70 -0.2
Low collector-emitter saturation voltage VCE(sat).
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50 -0.1
+0.25 2.65 -0.1
+0.15 5.55 -0.15
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -80 -80 -5 -4 -8 1.3 150 -55 to +150 Unit V V V A A W
Electrical Characteristics Ta = 25
Parameter Collector-emitter voltage Collector cutoff curent Emitter-base cutoff current Forward current transfer ratio Base to emitter voltage Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol VCEO ICES ICEO IEBO h FE VBE Testconditons IC = -30 m A, IB = 0 VCE = -80 V,VBE = 0 VCE = -60 V,IB = 0 VEB = -5 V, IC = 0 VCE = -4 V, IC = -1 A VCE = -4 V, IC = -3 A VCE = -4 V, IC = -3 A 70 15 -2 -1.5 20 0.2 IC = -4 A,IB1 = -0.4 A,IB2 = 0.4 A, VCC = -50 V 0.5 0.2 V V MHz ìs ìs ìs Min -80 -400 -700 -1 250 Typ Max Unit V ìA ìA m A
VCE(sat) IC = -4 A, IB = -0.4 A f T ton tstg tf VCE = -10 V, IC = -0.5 A , f = 10 MHz h FE Classification
Rank h FE Q 70 150 P 120 250
3 .8 0
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