* 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector power dissipation Junction temperatu
2SC1623
Kexin
165.55 KB
Npn silicon transistor.
SMD Type
NPN Silicon Transistor 2SC1623
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors
Unit: mm
+0.1 2.4-0.1
High DC Current Gain: hFE = 200 TYP. VC.
📁 Related Datasheet
2SC1621 - PNP Transistor
(NEC)
.
2SC1621 - NPN Silicon Transistor
(Kexin)
SMD Type
NPN Silicon Epitaxial Transistor 2SC1621
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
+0.1 2.4-0.1
Features
High speed : tstg.
2SC1622 - NPN Transistor
(NEC)
.
2SC1622A - NPN Transistor
(NEC)
.
2SC1622A - NPN Silicon Transistor
(Kexin)
SMD Type
NPN Silicon Epitaxial Transistor 2SC1622A
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors
Unit: mm
+0.1 2.4-0.1
High DC current gain.
+0.1 .
2SC1623 - NPN Transistor
(NEC)
DATA SHEET
SILICON TRANSISTOR
2SC1623
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
FEATURES • High DC Curre.
2SC1623 - Silicon Transistor
(GME)
Production specification
Silicon Epitaxial Planar Transistor
FEATURES
High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA).
High Voltage:VCEO=50.
2SC1623 - AMPLIFIER NPN TRANSISTOR
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
2SC1623
NPN SILICON TRANSISTOR
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON TRANSISTOR MINI MOLD
DESCRIPT.
