2SC3513 Datasheet, Transistor, Kexin

2SC3513 Features

  • Transistor +0.1 1.3-0.1 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-b

PDF File Details

Part number:

2SC3513

Manufacturer:

Kexin

File Size:

52.48kb

Download:

📄 Datasheet

Description:

Silicon npn epitaxial transistor.

Datasheet Preview: 2SC3513 📥 Download PDF (52.48kb)

TAGS

2SC3513
Silicon
NPN
Epitaxial
Transistor
Kexin

📁 Related Datasheet

2SC3510 - Silicon NPN Transistor (Hitachi Semiconductor)
2SC3127, 2SC3128, 2SC3510 Silicon NPN Epitaxial Application UHF/VHF wide band amplifier Outline MPAK 2SC3127 3 1 2 1. Emitter 2. Base 3. Collector.

2SC3512 - Silicon NPN Transistor (Hitachi Semiconductor)
2SC3512 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline TO-92 (2) 1. Base 2. Emitter 3. Collector 3 2 1 2SC3512 Absolute M.

2SC3512 - Silicon NPN Transistor (Renesas)
2SC3512 Silicon NPN Epitaxial REJ03G0714-0300 Rev.3.00 Apr 20, 2006 Application UHF / VHF wide band amplifier Outline RENESAS Package code: PRSS0003.

2SC3512 - Silicon NPN RF Transistor (Inchange Semiconductor)
isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC3512 DESCRIPTION ·Low Noise and High Gain NF = 1.6 dB TYP. @f = 900 MHz PG = 10.5 dB TYP. @f.

2SC3513 - Silicon NPN Transistor (Hitachi Semiconductor)
2SC3513 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC3513 Absolute Maxim.

2SC3514 - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor 2SC3514 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) ·Good Linearity of hFE ·Comple.

2SC3515 - Silicon NPN Transistor (Toshiba Semiconductor)
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3515 2SC3515 HIGH Voltage Control Applications Plasma Display, Nixie Tube Drive.

2SC3515 - Transistor (Kexin)
SMD Type High Voltage Control Applications 2SC3515 Transistors Features High Voltage: VCBO = 300V , VCEO = 300V Low Saturation Voltage: VCE(sat) = 0.

2SC3518 - NPN Power Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·Low collector saturation voltage ·High DC current gain ·Minimum Lot-to-Lot variations for robust device.

2SC3518 - Silicon Power Transistors (Renesas)
DATA SHEET SILICON POWER TRANSISTOR 2SC3518-Z NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3518-Z is designed for Audio Frequency Amplifier a.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts