Adoption of FBET process. High DC current gain. Low collector-to-emitter saturation voltage. High VEBO. Small Cob.
1 Emitter 2 Base 3 Collector
Absolute Maximum Ratings
2SC4410G, Panasonic
Transistors
This product plies with the RoHS Directive (EU 2002/95/EC).
2SC4410G
Silicon NPN epitaxial planar type
For UHF amplification
■ Fea.
2SC4412, Kexin
SMD Type
Transistors
NPN Triple Diffused Planar Silicon Transistor 2SC4412
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Unit: mm
Features
+0.1 2.4-0.1
High b.
