Datasheet4U Logo Datasheet4U.com

2SC4414 - PNP Transistor

Datasheet Summary

Features

  • Adoption of FBET process.
  • High breakdown voltage : VCEO>80V. Package Dimensions unit:mm 2033A [2SA1683/2SC4414] 4.0 2.2 1.8 3.0 0.6 0.4 0.5 0.4 0.4 15.0 ( ) : 2SA1683 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Elect.

📥 Download Datasheet

Datasheet preview – 2SC4414

Datasheet Details

Part number 2SC4414
Manufacturer Sanyo Semicon Device
File Size 40.01 KB
Description PNP Transistor
Datasheet download datasheet 2SC4414 Datasheet
Additional preview pages of the 2SC4414 datasheet.

📁 Similar Datasheet

  • 2SC4410 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SC4410G - Silicon NPN Transistor (Panasonic)
  • 2SC4412 - NPN Triple Diffused Planar Silicon Transistor (Kexin)
  • 2SC4413 - NPN Epitaxial Planar Silicon Transistor (Kexin)
  • 2SC4416 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SC4417 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SC4418 - Silicon NPN Transistor (Sanken electric)
  • 2SC4418 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC4418 - NPN Transistor (INCHANGE)
  • 2SC4419 - SILICON POWER TRANSISTOR (SavantIC)
Other Datasheets by Sanyo Semicon Device

Full PDF Text Transcription

Click to expand full text
Ordering number:ENN3012 PNP Epitaxial Planar Silicon Transistors 2SA1683/2SC4414 Low-Frequency General-Purpose Amplifier, Low-Frequency Power Amplifier Applications Features · Adoption of FBET process. · High breakdown voltage : VCEO>80V. Package Dimensions unit:mm 2033A [2SA1683/2SC4414] 4.0 2.2 1.8 3.0 0.6 0.4 0.5 0.4 0.4 15.0 ( ) : 2SA1683 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Electrical Characteristics at Ta = 25˚C 123 1.3 1.3 0.7 0.7 Conditions 3.0 3.
Published: |