2SC4408 Datasheet - Toshiba Semiconductor

2SC4408 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4408 Power Amplifier Applications Power Switching Applications 2SC4408 Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High collector power dissipation: PC = 900 mW High-speed switching: tstg = 500 ns (typ.) Complementary to 2SA1680 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base vo.

2SC4408 Datasheet (114.46 KB)