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2SC4408 - Silicon NPN Transistor

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Part number 2SC4408
Manufacturer Toshiba Semiconductor
File Size 114.46 KB
Description Silicon NPN Transistor
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4408 Power Amplifier Applications Power Switching Applications 2SC4408 Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW • High-speed switching: tstg = 500 ns (typ.) • Complementary to 2SA1680 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg 80 50 6 2 0.2 900 150 −55 to 150 V V V A A mW °C °C JEDEC JEITA TOSHIBA TO-92MOD ― 2-5J1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.
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