2SC4409 Datasheet - Toshiba Semiconductor

2SC4409 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4409 Power Amplifier Applications Power switching applications 2SC4409 Unit: mm Low collector saturation voltage: VCE (sat) = 0.5V (max) (at IC = 1A) High speed switching time: tstg = 500ns (typ.) Small flat package PC = 1~2 W (Mounted on a ceramic substrate) Complementary to 2SA1681 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage.

2SC4409 Features

* tions. 4 2009-12-21

2SC4409_ToshibaSemiconductor.pdf