Part number:
2SK3458
Manufacturer:
Kexin
File Size:
61.02 KB
Description:
Mos field effect transistor.
* +0.1 1.27-0.1 MOSFET Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low gate charge QG = 25 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) +0.2 8.7-0.2 Gate voltage rating 30 V Low on-state resistance RDS(on) = 2.2 MAX. (VGS = 10 V, ID = 3.0 A) +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 +0.2 5.28-0.2 Avalan
2SK3458
Kexin
61.02 KB
Mos field effect transistor.
📁 Related Datasheet
2SK345 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
2SK345
FEATURES ·Drain Current : ID= 5A@ TC=25℃ ·Drain Source Voltage
: VDSS= 40V(Min) ·Static Drain-Source On-Resis.
2SK345 - Silicon N-Channel MOSFET
(Hitachi)
.
2SK3450 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
2SK3450
FEATURES ·Drain Current : ID= 13A@ TC=25℃ ·Drain Source Voltage
: VDSS= 600V(Min) ·Static Drain-Source On-Re.
2SK3450-01 - n-Channel Silicon Power MOSFET
(Fuji)
2SK3450-01
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FUJI POWER MOSF.
2SK3451-01 - N-CHANNEL SILICON POWER MOSFET
(Fuji Electric)
2SK3451-01MR
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FUJI POWER MO.
2SK3451-01MR - N-CHANNEL SILICON POWER MOSFET
(Fuji Electric)
2SK3451-01MR
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FUJI POWER MO.
2SK3453 - N-Channel MOSFET
(Toshiba Semiconductor)
..
2SK3453
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3453
Switching Regulator Applications
· · · · Low.
2SK3454 - SWITCHING N-CHANNEL POWER MOSFET
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3454
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3454 is N-channel MOS FET device.