2SK3453 Datasheet (Toshiba Semiconductor)

2SK3453, N-Channel MOSFET

www.DataSheet4U.com 2SK3453 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3453 Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.72 Ω (typ.) High forward transfer admittance: |Yfs| = 7.0 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 700 V) Enhancement-model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gat