2SK3441 Datasheet - Toshiba Semiconductor

2SK3441 N-Channel MOSFET

2SK3441 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3441 DC-DC Converter Applications Relay Drive and Motor Drive Applications Low drain-source ON resistance: RDS (ON) = 4.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 80 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 60 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics www.DataSheet4U.

2SK3441 Features

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2SK3441 Datasheet (212.21 KB)