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2SK3407 - N-Channel MOSFET

2SK3407 Description

2SK3407 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3407 Switching Regulator Applications Unit: mm * * * .

2SK3407 Applications

* Unit: mm
* Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ. ) High forward transfer admittance: |Yfs| = 7.5 S (typ. ) Low leakage current: IDSS = 100 µA (max) (VDS = 450 V) Enhancement-mode: Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteris

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N-Channel MOSFET Toshiba Semiconductor
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