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2SK3407 Datasheet - Toshiba Semiconductor

2SK3407 N-Channel MOSFET

2SK3407 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3407 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 450 V) Enhancement-mode: Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Dra.

2SK3407_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SK3407

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

230.98 KB

Description:

N-channel mosfet.

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TAGS

2SK3407 2SK3407 N-Channel MOSFET Toshiba Semiconductor

2SK3407 Distributor