Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
Switching Regulator Applications
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- - Low drain-source ON resistance: RDS (ON) = 0.29 Ω (typ.) High forward transfer admittance: |Yfs| = 5.8 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDSS = 450 V) Enhancement-mode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 450 450 ±30 13 52 100 350 13 10 150 -55~150 Unit V V V A W mJ A mJ °C °C
Drain power dissipation (Tc = 25°C) Single...