Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
DC-DC Converter Relay Drive and Motor Drive Applications
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- - Low drain-source ON resistance: RDS (ON) = 3.8 mΩ (typ.) High forward transfer admittance: |Yfs| = 70 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 30 V) Enhancement-mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage...