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2SK3441
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3441
DC-DC Converter Applications Relay Drive and Motor Drive Applications
• • • • Low drain-source ON resistance: RDS (ON) = 4.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 80 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 60 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics www.DataSheet4U.com Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 60 60 ±20 75 300 125 468 75 12.
2SK3441 Datasheet
