Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
Switching Regulator, DC-DC Converter Applications Motor Drive Applications
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- - Low drain-source ON resistance: RDS (ON) = 6.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 30 S (typ.) Low leakage current: IDSS = 100 µA (VDS = 60 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Maximum Ratings (Tc = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current Drain power dissipation Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy Channel temperature Storage temperature range (Note 3) DC...