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2SK3445 - N-Channel MOSFET

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Datasheet Details

Part number 2SK3445
Manufacturer Toshiba
File Size 210.63 KB
Description N-Channel MOSFET
Datasheet download datasheet 2SK3445 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK3445 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3445 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • • • • Low drain-source ON resistance: RDS (ON) = 90 mΩ (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 250 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) www.DataSheet4U.com Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 250 250 ±30 20 80 125 487 20 12.