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2SK3442
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3442
Switching Regulator, DC-DC Converter and Motor Drive Applications
• • • • Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.) High forward transfer admittance: ⎪Yfs⎪ = 28 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 100 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
www.DataSheet4U.com Characteristics
Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current Drain power dissipation DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 100 100 ±30 45 180 125 468 45 12.