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2SK3479

MOS Field Effect Transistor

2SK3479 Features

* Super low on-state resistance: RDS(on)1 = 11 m RDS(on)2 = 13 m MAX. (VGS = 10 V, ID = 42 A) +0.2 8.7-0.2 MAX. (VGS = 4.5 V, ID = 42 A) Low Ciss: Ciss = 11000 pF TYP. Built-in gate protection diode +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 +0.2 5.28-0.2 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 +0.2 15.25-

2SK3479 Datasheet (73.39 KB)

Preview of 2SK3479 PDF

Datasheet Details

Part number:

2SK3479

Manufacturer:

Kexin

File Size:

73.39 KB

Description:

Mos field effect transistor.

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2SK3479 MOS Field Effect Transistor Kexin

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