2SK3479 - MOS Field Effect Transistor
2SK3479 Features
* Super low on-state resistance: RDS(on)1 = 11 m RDS(on)2 = 13 m MAX. (VGS = 10 V, ID = 42 A) +0.2 8.7-0.2 MAX. (VGS = 4.5 V, ID = 42 A) Low Ciss: Ciss = 11000 pF TYP. Built-in gate protection diode +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 +0.2 5.28-0.2 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 +0.2 15.25-
