2SK3475 Datasheet - Toshiba Semiconductor

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2SK3475 N-Channel MOSFET

2SK3475 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3475 VHF- and UHF-band Amplifier Applications Unit: mm Output power: PO = 630 m.

2SK3475_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SK3475

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

109.83 KB

Description:

N-Channel MOSFET

Applications

* Unit: mm Output power: PO = 630 mW (min) Gain: GP = 14.9dB (min) Drain efficiency: ηD = 45% (min)
* Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gain-source voltage Drain current Power dissipation Channel temperature Storage temperature range Symbol VDSS VGSS ID

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2SK3475 N-Channel MOSFET Toshiba Semiconductor

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