2SK3475 N-Channel MOSFET

Toshiba Semiconductor

Description

2SK3475 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3475 VHF- and UHF-band Amplifier Applications Unit: mm Output power: PO = 630 m.

📥 Download Datasheet

2SK3475 Datasheet Preview — Preview of 2SK3475 PDF

Datasheet Specifications

Part number: 2SK3475
Manufacturer: Toshiba ↗ Semiconductor
File Size: 109.83 KB
Datasheet: 2SK3475_ToshibaSemiconductor.pdf
Description: N-Channel MOSFET

Applications

* Unit: mm Output power: PO = 630 mW (min) Gain: GP = 14.9dB (min) Drain efficiency: ηD = 45% (min)
* Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gain-source voltage Drain current Power dissipation Channel temperature Storage temperature range Symbol VDSS VGSS ID

2SK3475 Distributors

📁 Related Datasheet

2SK3474-01 2SK3476 2SK3479 2SK3479-S 2SK3479-Z 2SK3479-ZJ

📌 All Tags

2SK3475 N-Channel MOSFET Toshiba Semiconductor

Toshiba Semiconductor 2SK3475-like datasheet