2SK3471 - N-Channel MOSFET
2SK3471 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3471 Switching Regulator and DC-DC Converter Applications Low drain-source ON resistance: RDS (ON) = 10 Ω (typ.) High forward transfer admittance: |Yfs| = 0.4 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 500 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gat
