| Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|
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Renesas Electronics Corporation | 2SK3503(0)-T1-A | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING | Verical | 3000 | 2391 units |
$0.16
|
🛒 Buy Now |
2SK3503
Kexin
1.02 MB
N-channel mosfet.
SMD Type
MOSFET
N-Channel MOSFET 2SK3503
SOT-523
1.6 +0.1 -0.1
1.0 +0.1 -0.1
0.2 +0.05 -0.05
U nit: m m 0.15±0.05
0.55 (REF.)
0.8±0.1
0.36±0.1
.
* VDS (V) = 16V
* ID = 100 mA (VGS = 1.5V)
* RDS(ON) ＜ 50Ω (VGS = 1.5V)
* RDS(ON) ＜ 15Ω (VGS = 2.5V)
* RDS(ON) ＜ 12Ω (VGS = 4V) Gate 21 +0.151.6 -0.15 Drain Body Diode 3 0.5 +0.1 -0.1 0.3±0.05
* Absolute Maximum Ratings Ta = 25℃ Source +0.050.75 -0.05 +0.10.8 -0.1 1
📁 Related Datasheet
2SK350 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
2SK350
DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 450V(Min) ·Fast Switching Speed ·10.
2SK350 - Silicon N-Channel MOSFET
(Hitachi)
.
2SK3501 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
2SK3501
FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage
: VDSS= 600V(Min) ·Static Drain-Source On-Re.
2SK3501-01 - N-CHANNEL SILICON POWER MOSFET
(Fuji Electric)
2SK3501-01
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FUJI POWER MOSF.
2SK3502-01MR - N CHANNEL SILICON POWER MOSET
(Fuji Electric)
2SK3502-01MR
Super FAP-G Series
Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FUJI POWER MO.
2SK3503 - N-Channel MOSFET
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3503
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
DESCRIPTION
The 2SK3503 is an N-chann.
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|
Renesas Electronics Corporation
|
| 2SK3503(0)-T1-A |
|
Power MOSFETs for Automotive
|
| Rochester Electronics |
| 30000 In Stock |
| Qty : 100000 units |
|
Unit Price : $0.08
|
| 🛒 Buy Now |
