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3DD13001 - NPN Transistors

Features

  • s.
  • Collector-emitter Voltage: V(BR)CEO=400V.
  • Collector Current: IC=0.2A 1.70 0.1 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 600 400 7 0.2 0.5 150 -55 to 150 Unit V V V A W ℃ ℃.
  • Electrical Characteristics Ta = 25℃ Par.

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SMD Type NPN Transistors 3DD13001 Transistors ■ Features ● Collector-emitter Voltage: V(BR)CEO=400V ● Collector Current: IC=0.2A 1.70 0.1 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 600 400 7 0.2 0.
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