1N5819S Features
* Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free xxxx wheeling,and polarity protection applications The plastic material carries U/L recognition 94V-0 Mechanica
Datasheet Details
1N5819S, 1N5817S
LGE
104.22 KB
Schottky barrier rectifiers.
This datasheet PDF includes multiple part numbers: 1N5819S, 1N5817S.
Please refer to the document for exact specifications by model.
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1N5819S Distributor
