3N164, 3N163 P-CHANNEL ENHANCEMENT MODE MOSFET

LINEAR SYSTEMS

Description

3N163, 3N164 P-CHANNEL ENHANCEMENT MODE MOSFET .

📥 Download Datasheet

3N164 Datasheet Preview — This datasheet PDF includes multiple part numbers: 3N164, 3N163. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: 3N164, 3N163
Manufacturer: LINEAR SYSTEMS
File Size: 189.63 KB
Datasheet: 3N163-LINEARSYSTEMS.pdf
Description: P-CHANNEL ENHANCEMENT MODE MOSFET
Note: This datasheet PDF includes multiple part numbers: 3N164, 3N163.
Please refer to the document for exact specifications by model.

Features

* VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise stated) Drain-Source or Drain-Gate Voltage 3N163 3N164 Drain Current Storage Temperature Power Dissipation TO-72 case Power Dissipation SOT-143 case -40V

3N164 Distributors

📁 Related Datasheet

3N161 - DIODE PROTECTED P-CHANNEL ENGANCEMENT MODE MOSFET GENERAL PUROPSE AMPLIFIER/SWITCH (Intersil Corporation)
3N163 - P-Channel Enhancement-Mode MOS Transistors (Siliconix)
3N165 - Monolithic Dual P-Channel Enhancement Mode MOSFET (Calogic LLC)
3N166 - Monolithic Dual P-Channel Enhancement Mode MOSFET (Calogic LLC)
3N169 - (3N169 - 3N171) MOSFETs Switching (Motorola Semiconductor)
3N100E - MTB3N100E (Motorola)

📌 All Tags

P-CHANNEL ENHANCEMENT MODE MOSFET LINEAR SYSTEMS

LINEAR SYSTEMS 3N164-like datasheet