Datasheet4U Logo Datasheet4U.com

LSI1013LT1G - P-Channel 1.8-V (G-S) MOSFET

Datasheet Summary

Features

  • D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resistance: 1.2 W D Low Threshold: 0.8 V (typ) D Fast Switching Speed: 14 ns D S- Prefix for Automotive and Other.

📥 Download Datasheet

Datasheet preview – LSI1013LT1G

Datasheet Details

Part number LSI1013LT1G
Manufacturer LRC
File Size 260.23 KB
Description P-Channel 1.8-V (G-S) MOSFET
Datasheet download datasheet LSI1013LT1G Datasheet
Additional preview pages of the LSI1013LT1G datasheet.

📁 Similar Datasheet

  • LSI1032E - ISPLSI1032E (Lattice Semiconductor)
  • LSI11240 - TOWER TYPE LED LAMPS (LIGITEK electronics)
  • LSI320HN01-0 - TFT LCD (Samsung)
  • LSI53C810A - Pci to Scsi I/o Processor (LSI Logic Corporation)
  • LSI53C825A - Pci to Ultra Scsi I/o Processor Technical Manual (LSI Logic Corporation)
  • LSI53C875 - PCI to Ultra SCSI I/O Processor (LSI Logic)
  • LSI53C875A - PCI to Ultra SCSI Controller (LSI Logic)
  • LSI53C875E - PCI to Ultra SCSI I/O Processor (LSI Logic)
  • LSI53C876E - PCI-Dual Channel Ultra SCSI Multifuction Controller (ETC)
  • LSI53C896 - ULTRA2 SCSI CONTROLLER (LSI)
Other Datasheets by LRC

Full PDF Text Transcription

Click to expand full text
LESHAN RADIO COMPANY, LTD. P-Channel 1.8-V (G-S) MOSFET LSI1013LT1G S-LSI1013LT1G FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resistance: 1.2 W D Low Threshold: 0.8 V (typ) D Fast Switching Speed: 14 ns D S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
Published: |