* RDS(ON) ≦8Ω@VGS=4V
* RDS(ON) ≦13Ω@VGS=2.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability
* Capable doing Cu wire bonding
* ESD Protected:1000V APPLICATIONS
* Power Management in Note book
* P
S-L2N7002FWT1G Datasheet (281.70 KB)
S-L2N7002FWT1G
LRC
281.70 KB
Small signal mosfet.
LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 30 Volts N Channel SC70 We declare that the material of product are Halogen Free and.
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