Datasheet4U Logo Datasheet4U.com

S-LSI1012LT1G

N-Channel 1.8-V (G-S) MOSFET

S-LSI1012LT1G Datasheet (440.11 KB)

Preview of S-LSI1012LT1G PDF Datasheet

Datasheet Details

Part number:

S-LSI1012LT1G

Manufacturer:

LRC

File Size:

440.11 KB

Description:

N-channel 1.8-v (g-s) mosfet

S-LSI1012LT1G Features

* D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resistance: 0.7 W D Low Threshold: 0.8 V (typ) D Fast Switching Speed: 10 ns D S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qua

📁 Related Datasheet

S-LSI1012N3T5G - N-Channel 1.8-V (G-S) MOSFET (LRC)
N-Channel 1.8-V (G-S) MOSFET FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resis.

S-LSI1012XT1G - N-Channel 1.8-V (G-S) MOSFET (LRC)
LESHAN RADIO COMPANY, LTD. N-Channel 1.8-V (G-S) MOSFET LSI1012XT1G S-LSI1012XT1G FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD.

S-LSI1013LT1G - P-Channel 1.8-V (G-S) MOSFET (LRC)
LESHAN RADIO COMPANY, LTD. P-Channel 1.8-V (G-S) MOSFET LSI1013LT1G S-LSI1013LT1G FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD.

S-LSI1013XT1G - P-Channel 1.8-V (G-S) MOSFET (LRC)
P-Channel 1.8-V (G-S) MOSFET LESHAN RADIO COMPANY, LTD. LSI1013XT1G S-LSI1013XT1G FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD .

S-L1SS360TT1G - Monolithic Dual Switching Diode (LRC)
LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Common Anode FEATURES z We declare that the material of product pliance with RoHS re.

S-L1SS400CST5G - Switching diode (Leshan Radio Company)
LESHAN RADIO COMPANY, LTD. Switching diode • Applications High speed switching • Features 1) Extremely small surface mounting type. 2) High Speed. 3).

TAGS

S-LSI1012LT1G N-Channel 1.8-V G-S MOSFET LRC

Image Gallery

S-LSI1012LT1G Datasheet Preview Page 2 S-LSI1012LT1G Datasheet Preview Page 3

S-LSI1012LT1G Distributor