* High transfer ratio fT. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -30 V VCEO -20 V VEBO -5.0 V IC -30 mA PC 250 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition ICBO ICEO IEBO hFE VCE(sat) VBE fT NF Zrb Cre VCB=-10V IE=0
2SA838
LZG
210.89 KB
Silicon pnp transistor.
2SA838(3CG838)
PNP /SILICON PNP TRANSISTOR
：， 2SC1359(3DG1359)。
Purpose: For low-frequency amplification, complementary to 2SC1359(3DG1359).
:。 Fea.
📁 Related Datasheet
2SA830 - PNP Transistor
(ROHM)
.
2SA830S - High-gain Amplifier Transistor
(Rohm)
Transistors
2SB852K / 2SA830S 2SD1383K / 2SC1645S
(96-118-B20)
(96-205-D20)
280
Appendix
Notes
No technical content pages of this document may b.
2SA831 - PNP Transistor
(ROHM)
.
2SA836 - Silicon PNP Epitaxial Transistor
(Hitachi Semiconductor)
2SA836
Silicon PNP Epitaxial
Application
Low frequency low noise amplifier
Outline
TO-92 (1)
1. Emitter 2. Collector 3. Base 3 2 1
2SA836
Absolute.
2SA836 - Silicon PNP Transistor
(Renesas)
2SA836
Silicon PNP Epitaxial
REJ03G0629-0200 (Previous ADE-208-316) Rev.2.00 Aug.10.2005
Application
Low frequency low noise amplifier
Outline
RENES.
2SA837 - Silicon POwer Transistors
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SA837
DESCRIPTION ·With TO-3 package ·Wide area of.
2SA837 - POWER TRANSISTOR
(Inchange Semiconductor)
..net
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA837
DESCRIPTION ·With TO-3 package ·Wide area o.
2SA838 - Silicon PNP epitaxial planer type Transistor
(Panasonic Semiconductor)
Transistor
2SA838
Silicon PNP epitaxial planer type
For high-frequency amplification Complementary to 2SC1359
5.1±0.2
Unit: mm
5.0±0.2 4.0±0.2
s Fe.
