LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors www.datasheet4u.com NPN/PNP Duals (Complimentary) These transistors are designed for general purpose amplifier applications.
They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications.
Device Marking: LBC846BPDW1T1 = BB LBC847BPDW1T1 = 13F LBC847CPDW1T1 = 13G LBC848BPDW1T1 = 13K LBC848CPDW1T1 = 13L LBC846BPDW1T1 LBC847BPDW1T1 LBC847CPDW1T1 LBC848BPDW1T1 LBC848CPDW1T1 6 5
LBC847BPDW1T1 Features
* (mV/ °C) -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 0.02 0.1 1.0 IB, BASE CURRENT (mA) 10 20 0.2 10 1.0 IC, COLLECTOR CURRENT (mA) 100 Figure 15. Collector Saturation Region Figure 16. Base
* Emitter Temperature Coefficient fă, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 400 300 200 VCE = 10 V
LBC848BPDW1T1_LeshanRadioCompany.pdf
Datasheet Details
LBC847BPDW1T1, LBC848BPDW1T1
Leshan Radio Company
283.51 KB
(lbc84xxpdw1t1) dual general purpose transistors npn/pnp duals.
This datasheet PDF includes multiple part numbers: LBC847BPDW1T1, LBC848BPDW1T1.
Please refer to the document for exact specifications by model.
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