* (mV/ °C) -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 0.02 0.1 1.0 IB, BASE CURRENT (mA) 10 20 0.2 10 1.0 IC, COLLECTOR CURRENT (mA) 100 Figure 15. Collector Saturation Region Figure 16. Base
* Emitter Temperature Coefficient fă, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 400 300 200 VCE = 10 V
LBC847CPDW1T1 Datasheet (283.51 KB)
LBC847CPDW1T1
Leshan Radio Company
283.51 KB
(lbc84xxpdw1t1) dual general purpose transistors npn/pnp duals.
LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors
www.datasheet4u.com
NPN/PNP Duals (Complimentary)
These transistors are designed for gen.
📁 Related Datasheet
LBC847CPDW1T1G Dual-Channel Transistor (Leshan Radio Company)
LBC847CDW1T1 (LBC846xDW1T1 - LBC848xDW1T1) Dual General Purpose Transistors NPN Duals (Leshan Radio Company)
LBC847CDW1T1G Dual-Channel Transistor (Leshan Radio Company)
LBC847CLT1G General Purpose Transistors (Leshan Radio Company)
LBC847CLT3G General Purpose Transistors (Leshan Radio Company)
LBC847CWT1 (LBC846xWT1 - LBC848xWT1) General Purpose Transistors NPN Silicon (Leshan Radio Company)
LBC847CWT1G General Purpose Transistors (Leshan Radio Company)
LBC847CWT3G General Purpose Transistors (Leshan Radio Company)
LBC847ALT1G General Purpose Transistors (Leshan Radio Company)
LBC847ALT3G General Purpose Transistors (Leshan Radio Company)
TAGS
Image Gallery
