LBC848BPDW1T1G - Dual-Channel Transistor
LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors NPN/PNP Duals (Complimentary) These transistors are designed for general purpose amplifier applications.
They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications.
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
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LBC848BPDW1T1G Features
* N TYPICAL NPN CHARACTERISTICS
* LBC847 SERIES & LBC848 SERIES 2.0 1.5 VCE = 10 V TA = 25°C 1.0 0.8 0.6 0.4 0.3 0.2 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mAdc) Figure 13. Normalized DC Current Gain V, VOLTAGE (VOLTS) 1.0 0.9 TA = 25°C 0.8 VBE(sat) @ IC/IB =
