LBC848BPDW1T1G, LBC846BPDW1T1G Datasheet - Leshan Radio Company

LBC848BPDW1T1G Dual-Channel Transistor

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Duals (Complimentary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDER.

LBC848BPDW1T1G Features

* N TYPICAL NPN CHARACTERISTICS

* LBC847 SERIES & LBC848 SERIES 2.0 1.5 VCE = 10 V TA = 25°C 1.0 0.8 0.6 0.4 0.3 0.2 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mAdc) Figure 13. Normalized DC Current Gain V, VOLTAGE (VOLTS) 1.0 0.9 TA = 25°C 0.8 VBE(sat) @ IC/IB =

LBC846BPDW1T1G-LeshanRadioCompany.pdf

LBC848BPDW1T1G Datasheet Preview — This datasheet PDF includes multiple part numbers: LBC848BPDW1T1G, LBC846BPDW1T1G. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

LBC848BPDW1T1G, LBC846BPDW1T1G

Manufacturer:

Leshan Radio Company

File Size:

185.88 KB

Description:

Dual-channel transistor.

Note:

This datasheet PDF includes multiple part numbers: LBC848BPDW1T1G, LBC846BPDW1T1G.
Please refer to the document for exact specifications by model.

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LBC848BPDW1T1G LBC846BPDW1T1G Dual-Channel Transistor Leshan Radio Company

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