LBC848BPDW1T1 Datasheet - Leshan Radio Company

LBC848BPDW1T1, (LBC84xxPDW1T1) Dual General Purpose Transistors NPN/PNP Duals

LESHAN RADIO COMPANY, LTD.Dual General Purpose Transistors www.datasheet4u.com NPN/PNP Duals (Complimentary) These transistors are designed for gen.

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LBC848BPDW1T1_LeshanRadioCompany.pdf

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Datasheet Details

Part number:

LBC848BPDW1T1

Manufacturer:

Leshan Radio Company

File Size:

283.51 KB

Description:

(LBC84xxPDW1T1) Dual General Purpose Transistors NPN/PNP Duals

Features

* (mV/ °C) -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 0.02 0.1 1.0 IB, BASE CURRENT (mA) 10 20 0.2 10 1.0 IC, COLLECTOR CURRENT (mA) 100 Figure 15. Collector Saturation Region Figure 16. Base
* Emitter Temperature Coefficient fă, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 400 300 200 VCE = 10 V

Applications

* They are housed in the SOT
* 363/SC
* 88 which is designed for low power surface mount applications.
* Device Marking: LBC846BPDW1T1 = BB LBC847BPDW1T1 = 13F LBC847CPDW1T1 = 13G LBC848BPDW1T1 = 13K LBC848CPDW1T1 = 13L LBC846BPDW1T1 LBC847BPDW1T1 LBC847CPDW1T1 LBC848BPDW1T1 LBC8

LBC848BPDW1T1 Distributors

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LBC848BPDW1T1 LBC84xxPDW1T1 Dual General Purpose Transistors NPN PNP Duals Leshan Radio Company

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