LDTDG12GPLT1G - Bias Resistor Transistor

Product Overview

Leshan Radio Company

Part number	LDTDG12GPLT1G
Manufacturer	Leshan Radio Company
File Size	319.84 KB
Description	Bias Resistor Transistor
Datasheet	LDTDG12GPLT1G Datasheet
Additional preview pages of the LDTDG12GPLT1G datasheet.

1) High hFE. 300 (Min. ) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA) 3) Built-in zener diode gives strong protection against reverse surge by L- load (an inductive load).
We declare that the material of product compliance with RoHS requirements. zStructure NPN epitaxial planar silicon transistor (with built-in resistor and zener diode) zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base.

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Published: Aug 25, 2015 |