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LDTDG12GPLT1G Bias Resistor Transistor

LDTDG12GPLT1G Description

LESHAN RADIO COMPANY, LTD.Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPLT1G zAppl.

LDTDG12GPLT1G Features

* 1) High hFE. 300 (Min. ) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA) 3) Built-in zener diode gives strong protection against reverse surge by L- load (an inductive load).
* We declare that the material of product compliance with RoHS requirements. z

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Bias Resistor Transistor Leshan Radio Company
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