* 1) High hFE. 300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA) 3) Built-in zener diode gives strong protection against reverse surge by L- load (an inductive load).
* We declare that the material of product compliance with RoHS requirements. z
LDTDG12GPLT1G Datasheet (319.84 KB)
LDTDG12GPLT1G
Leshan Radio Company
319.84 KB
Bias resistor transistor.
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
LDTDG12GPLT1G
zAppl.
📁 Related Datasheet
LDTDG12GPLT3G Bias Resistor Transistor (Leshan Radio Company)
LDTDG12GPT1G Bias Resistor Transistor (LRC)
LDTDG12GPT3G Bias Resistor Transistor (LRC)
LDTDG12GPWT1G Bias Resistor Transistor (LRC)
LDTDG12GPWT3G Bias Resistor Transistor (LRC)
LDTD113EET1G Bias Resistor Transistor (LRC)
LDTD113ELT1G Bias Resistor Transistor (Leshan Radio Company)
LDTD113ELT3G Bias Resistor Transistor (Leshan Radio Company)
LDTD113ZET1G Bias Resistor Transistor (LRC)
LDTD113ZLT1G Bias Resistor Transistor (Leshan Radio Company)
