LDTDG12GPLT1G Datasheet, Transistor, Leshan Radio Company

LDTDG12GPLT1G Features

  • Transistor 1) High hFE. 300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA) 3) Built-in zener diode gives strong protection against reverse surge by L

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Part number:

LDTDG12GPLT1G

Manufacturer:

Leshan Radio Company

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319.84kb

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📄 Datasheet

Description:

Bias resistor transistor.

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Page 2 of LDTDG12GPLT1G Page 3 of LDTDG12GPLT1G

LDTDG12GPLT1G Application

  • Applications Driver zFeatures 1) High hFE. 300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA) 3) Bui

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LDTDG12GPLT1G
Bias
Resistor
Transistor
Leshan Radio Company

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