* 1) High hFE. 300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA) 3) Built-in zener diode gives strong protection against reverse surge by L- load (an inductive load).
* We declare that the material of product compliance with RoHS requirements. z
LDTDG12GPLT3G Datasheet (319.84 KB)
LDTDG12GPLT3G
Leshan Radio Company
319.84 KB
Bias resistor transistor.
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
LDTDG12GPLT1G
zAppl.
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