* 1) High hFE. 300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA) 3) Built-in zener diode gives strong protection against reverse surge by L- load (an inductive load).
* We declare that the material of product compliance with RoHS requirements. z
LDTDG12GPT3G Datasheet (289.18 KB)
LDTDG12GPT3G
LRC
289.18 KB
Bias resistor transistor.
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
LDTDG12GPT1G
zAppli.
📁 Related Datasheet
LDTDG12GPT1G Bias Resistor Transistor (LRC)
LDTDG12GPLT1G Bias Resistor Transistor (Leshan Radio Company)
LDTDG12GPLT3G Bias Resistor Transistor (Leshan Radio Company)
LDTDG12GPWT1G Bias Resistor Transistor (LRC)
LDTDG12GPWT3G Bias Resistor Transistor (LRC)
LDTD113EET1G Bias Resistor Transistor (LRC)
LDTD113ELT1G Bias Resistor Transistor (Leshan Radio Company)
LDTD113ELT3G Bias Resistor Transistor (Leshan Radio Company)
LDTD113ZET1G Bias Resistor Transistor (LRC)
LDTD113ZLT1G Bias Resistor Transistor (Leshan Radio Company)
