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LSIC2SD120N120PA 2 x 60A SiC Schottky Barrier Diode

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Description

LSIC2SD120N120PA Silicon Carbide Schottky Diode Datasheet LSIC2SD120N120PA 1200 V, 2x60 A SiC Schottky Barrier Diode *Backside is isolated Agen.

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Features

* Positive temperature coefficient for safe operation and ease of paralleling
* 175 °C maximum operating junction temperature
* Excellent surge capability
* Extremely fast, temperature-independent switching behavior
* Dramatically reduced switching losses comp

Applications

* Boost diodes in PFC or DC/DC stages
* Switch-mode power supplies
* Solar inverters
* Uninterruptable power supplies
* Industrial motor drives
* Battery Chargers
* High speed rectifier 1 Specifications are subject to change without notice.

LSIC2SD120N120PA Distributors

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