LSD20N65 Datasheet - Lonten

LSD20N65 N-channel MOSFET

LonFETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. Product Summary VDS @ Tj,max 700V RDS(on),max 0.15Ω.

LSD20N65 Features

* Ultra low RDS(on)

* Ultra low gate charge (typ. Qg = 65nC)

* 100% UIS tested

* RoHS compliant D G S N-Channel MOSFET Pb Absolute Maximum Ratings Parameter Drain-Source Voltage Continuous drain current Pulsed drain current 1) ( TC = 25°C ) ( TC = 100°C ) Gate-Source voltag

LSD20N65-Lonten.pdf