LSD11N65 - N-channel MOSFET

Product Overview

Part number	LSD11N65
Manufacturer	Lonten
File Size	680.53 KB
Description	N-channel MOSFET
Datasheet	LSD11N65 Datasheet
Additional preview pages of the LSD11N65 datasheet.

LonFETTM Power MOSFET is fabricated using advanced super junction technology.

Ultra low RDS(on).
Ultra low gate charge (typ. Qg = 28nC).
100% UIS tested.
RoHS compliant D G S N-Channel MOSFET Pb Absolute Maximum Ratings Parameter Drain-Source Voltage Continuous drain current Pulsed drain current 1) ( TC = 25°C ) ( TC = 100°C ) Gate-Source voltage Avalanche energy, single pulse 2) Avalanche energy, repetitive 1) Avalanche current, repetitive 1) Power Dissipation ( TC = 25°C ) - Derate above 25°C Operating and Storage Temperature Range Co.

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Published: Mar 30, 2021 |