LSD11N65

N-channel MOSFET

LSD11N65 Features

* Ultra low RDS(on)

* Ultra low gate charge (typ. Qg = 28nC)

* 100% UIS tested

* RoHS compliant D G S N-Channel MOSFET Pb Absolute Maximum Ratings Parameter Drain-Source Voltage Continuous drain current Pulsed drain current 1) ( TC = 25°C ) ( TC = 100°C ) Gate-Source voltag

LSD11N65 General Description

LonFETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. Product Summary VDS @ Tj,max 700V RDS(on),max 0.35Ω.

LSD11N65 Datasheet (680.53 KB)

LSD11N65 Datasheet Preview — Preview of LSD11N65 PDF

Datasheet Details

Part number:

LSD11N65

Manufacturer:

Lonten

File Size:

680.53 KB

Description:

N-channel mosfet.

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LSD11N65 N-channel MOSFET Lonten

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LSD11N65 Features

LSD11N65 General Description

Datasheet Details

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Description:

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