LSD11N60E N-Channel 600V Power MOSFET

VBsemi

Description

LSD11N60E-VB www.VBsemi.com LSD11N60E-VB Datasheet N-Channel 600V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max.RDS(on) at .

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Datasheet Specifications

Part number: LSD11N60E
Manufacturer: VBsemi
File Size: 277.53 KB
Datasheet: LSD11N60E-VBsemi.pdf
Description: N-Channel 600V Power MOSFET

Features

* Low figure-of-merit (FOM) Ron x Qg
* Low input capacitance (Ciss)
* Reduced switching and conduction losses
* Ultra low gate charge (Qg)

Applications

* Server and telecom power supplies
* Switch mode power supplies (SMPS)
* Power factor correction power supplies (PFC)
* Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting
* Industrial GDS Top View G S N-Channel MOSFET ABSOLUTE MAXIMUM

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LSD11N60E N-Channel 600V Power MOSFET VBsemi

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